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RTEMS 6.2
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Configuration options for NAND simulation. More...
#include <flash_sim_flashdev.h>
Data Fields | |
| uint64_t | read_delay_ns |
| The minimum delay in nanoseconds for a read operation. | |
| uint64_t | write_delay_ns |
| The minimum delay in nanoseconds for a write operation. | |
| uint64_t | erase_delay_ns |
| The minimum delay in nanoseconds for a erase operation. | |
| uint64_t | page_size_bytes |
| The number of bytes in each page. | |
| uint64_t | page_oob_bytes |
| The number of spare/out of band (OOB) bytes per page. | |
| uint64_t | pages_per_sector |
| The number of pages in each sector. | |
| uint64_t | total_sectors |
| The total number of sectors in the simulated device. | |
| rtems_flashdev_flash_type | type |
| The type of flash that is being simulated. | |
| void *(* | alloc )(size_t size) |
| Allocator for simulated flash, but not other allocations. malloc() will be used if NULL. | |
| void(* | free )(void *ptr) |
| Free function for simulated flash, but not other allocations. free() will be used if NULL. | |
Configuration options for NAND simulation.