RTEMS 6.2
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Data Fields
flash_sim_flashdev_attributes Struct Reference

Configuration options for NAND simulation. More...

#include <flash_sim_flashdev.h>

Data Fields

uint64_t read_delay_ns
 The minimum delay in nanoseconds for a read operation.
 
uint64_t write_delay_ns
 The minimum delay in nanoseconds for a write operation.
 
uint64_t erase_delay_ns
 The minimum delay in nanoseconds for a erase operation.
 
uint64_t page_size_bytes
 The number of bytes in each page.
 
uint64_t page_oob_bytes
 The number of spare/out of band (OOB) bytes per page.
 
uint64_t pages_per_sector
 The number of pages in each sector.
 
uint64_t total_sectors
 The total number of sectors in the simulated device.
 
rtems_flashdev_flash_type type
 The type of flash that is being simulated.
 
void *(* alloc )(size_t size)
 Allocator for simulated flash, but not other allocations. malloc() will be used if NULL.
 
void(* free )(void *ptr)
 Free function for simulated flash, but not other allocations. free() will be used if NULL.
 

Detailed Description

Configuration options for NAND simulation.


The documentation for this struct was generated from the following file: